Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng, Chun Meng Dou, Masaaki Niwa, Keisaku Yamada, Kenji Ohmori

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

Original languageEnglish
Article number6672013
Pages (from-to)3-5
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
Publication statusPublished - 2014 Jan

Keywords

  • MOSFETs
  • Random telegraph noise
  • dynamic gate bias

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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