Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng; Chun Meng Dou; Masaaki Niwa; Keisaku Yamada; Kenji Ohmori

doi:10.1109/LED.2013.2288981

Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng, Chun Meng Dou, Masaaki Niwa, Keisaku Yamada, Kenji Ohmori

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I_d) during the rise/fall edges of the pulsed gate voltage (V _g) cycle was investigated. We have revealed for the first time that the existence of RTN increases I_d fluctuations under dynamic V _g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V_g, which are governed by the RTN profiles, significantly affect the I_d values during the rise/fall edges of V_g. The revealed effects of RTN with different profiles on I_d under dynamic V_g will be useful for designing ultrahigh speed circuits.

Original language	English
Article number	6672013
Pages (from-to)	3-5
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/LED.2013.2288981
Publication status	Published - 2014 Jan

Keywords

MOSFETs
Random telegraph noise
dynamic gate bias

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2288981

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abstract = "The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.",

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author = "Wei Feng and Dou, {Chun Meng} and Masaaki Niwa and Keisaku Yamada and Kenji Ohmori",

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AU - Feng, Wei

AU - Dou, Chun Meng

AU - Niwa, Masaaki

AU - Yamada, Keisaku

AU - Ohmori, Kenji

PY - 2014/1

Y1 - 2014/1

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AB - The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

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Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Abstract

Keywords

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