Impact of parylene-C thickness on performance of KTaO3 field-effect transistors with high- k oxide/parylene-C hybrid gate dielectric

Tingting Wei, Kohei Fujiwara, Teruo Kanki, Hidekazu Tanaka

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The proposal of a hybrid gate dielectric systematically modulated with low-k material layer has been shown to be a promising strategy in the development of low-consumption field-effect transistors (FETs) with high performance. In this work, by fabricating KTaO3 FETs containing Y-doped Ta2O5/parylene-C hybrid gate dielectrics with different ratios of component thicknesses, we explored the dependence of the transistor electrical properties on the parylene-C layer thickness. Based on the results and analysis, an optimized transistor performance was achieved with an appropriate Y-doped Ta2O5/parylene-C thickness ratio from the point of view on low voltage operation. This study contributes to provide guidance for future device design and applications.

Original languageEnglish
Article number034502
JournalJournal of Applied Physics
Volume119
Issue number3
DOIs
Publication statusPublished - 2016 Jan 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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