Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells

K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, S. Noda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages101-102
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: 2010 Sep 262010 Sep 30

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
CountryJapan
CityKyoto
Period10/9/2610/9/30

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Kojima, K., Yamaguchi, A. A., Funato, M., Kawakami, Y., & Noda, S. (2010). Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010 (pp. 101-102). [5642731] (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2010.5642731