Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

T. Suemitsu, H. Yokoyama, Y. Ishii

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.

Original languageEnglish
Pages (from-to)2141-2143
Number of pages3
JournalElectronics Letters
Volume35
Issue number24
DOIs
Publication statusPublished - 1999 Nov 25
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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