Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

T. Suemitsu; H. Yokoyama; Y. Ishii

doi:10.1049/el:19991433

Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

T. Suemitsu, H. Yokoyama, Y. Ishii

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.

Original language	English
Pages (from-to)	2141-2143
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	24
DOIs	https://doi.org/10.1049/el:19991433
Publication status	Published - 1999 Nov 25
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19991433

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title = "Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs",

abstract = "A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.",

author = "T. Suemitsu and H. Yokoyama and Y. Ishii",

year = "1999",

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T1 - Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

AU - Suemitsu, T.

AU - Yokoyama, H.

AU - Ishii, Y.

PY - 1999/11/25

Y1 - 1999/11/25

N2 - A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.

AB - A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.

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JF - Electronics Letters

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ER -

Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

Abstract

ASJC Scopus subject areas

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