Impact of interface properties on spin accumulation in dual-injection lateral spin valves

H. Idzuchi; S. Karube; Y. Fukuma; T. Aoki; Y. Otani

doi:10.1063/1.4824897

Impact of interface properties on spin accumulation in dual-injection lateral spin valves

H. Idzuchi, S. Karube, Y. Fukuma, T. Aoki, Y. Otani

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni₈₀Fe₂₀(/MgO)/Ag or Co₅₀Fe ₅₀/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current I_S/I_C up to 0.55 is realized.

Original language	English
Article number	162403
Journal	Applied Physics Letters
Volume	103
Issue number	16
DOIs	https://doi.org/10.1063/1.4824897
Publication status	Published - 2013 Oct 14
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Impact of interface properties on spin accumulation in dual-injection lateral spin valves",

abstract = "We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni80Fe20(/MgO)/Ag or Co50Fe 50/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current IS/IC up to 0.55 is realized.",

author = "H. Idzuchi and S. Karube and Y. Fukuma and T. Aoki and Y. Otani",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research (A) (Grant No. 23244071) and a Young Science Aid (A) (Grant No. 23681032) from the Ministry of Education, Culture, Sports, Science and Technology, Japan and Hoso Bunka Foundation. ",

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doi = "10.1063/1.4824897",

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journal = "Applied Physics Letters",

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T1 - Impact of interface properties on spin accumulation in dual-injection lateral spin valves

AU - Idzuchi, H.

AU - Karube, S.

AU - Fukuma, Y.

AU - Aoki, T.

AU - Otani, Y.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research (A) (Grant No. 23244071) and a Young Science Aid (A) (Grant No. 23681032) from the Ministry of Education, Culture, Sports, Science and Technology, Japan and Hoso Bunka Foundation.

PY - 2013/10/14

Y1 - 2013/10/14

N2 - We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni80Fe20(/MgO)/Ag or Co50Fe 50/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current IS/IC up to 0.55 is realized.

AB - We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni80Fe20(/MgO)/Ag or Co50Fe 50/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current IS/IC up to 0.55 is realized.

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JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162403

ER -

Impact of interface properties on spin accumulation in dual-injection lateral spin valves

Abstract

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