Impact of interface micro-roughness on low frequency noise in (110) and (100) pMOSFETs

Philippe Gaubert, Akinobu Teramoto, T. Hamada, M. Yamamoto, K. Nii, H. Akahori, Koji Kotani, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper we describe the evaluation of the dependence of low frequency noise upon the micro-roughness of the surface in pMOSFETs, based on (100) and (110) oriented silicon. For the (110) surface, because RCA cleaning makes the surface rough, we developed a 5 step room temperature cleaning process which does not use alkaline solution. As a result a drop of more than a decade in 1/f noise level was achieved. This low noise level is further reduced by using the process of microwave-excited high-density plasma oxidation of the gate oxide instead of thermal oxidation. This reduction is also observed for a (100) surface if treated in the same way, but the magnitude of the drop is less.

Original languageEnglish
Title of host publicationNOISE AND FLUCTUATIONS
Subtitle of host publication18th International Conference on Noise and Fluctuations - ICNF 2005
Pages199-202
Number of pages4
DOIs
Publication statusPublished - 2005 Aug 25
EventNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 - Salamanca, Spain
Duration: 2005 Sep 192005 Sep 23

Publication series

NameAIP Conference Proceedings
Volume780
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005
CountrySpain
CitySalamanca
Period05/9/1905/9/23

Keywords

  • 1/f noise
  • MOSFET
  • Silicon
  • Surface micro-roughness
  • Surface orientation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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