Impact of improved mobilities and suppressed 1/f noise in fully depleted SOI MOSFETs fabricated on Si(110) surface

W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, we reveal that Si(110) surface is flatted using HF(0.5wt%)/H2-UPW solution in N2 ambience without light illumination. We demonstrate that the electron effective mobility on Si(110) is obviously improved by introducing this new chemical surface flattening process. Especially, the improvement of electron mobility become larger while the effective field is increased. As a result, the electron mobility is improved about 1.4 times at the high effective field equals 1 MV/cm, which is mostly limited by surface roughness. We consider that the improvement of the electron mobility is originated in the good suppression of surface micro-roughness in this experiment. However, the 1/f noise level is almost the same even introducing the chemical surface flattening process. In this paper, it is observed that the 1/f noise level of MOSFETs on Si(110) is suppressed very well by introducing the novel accumulation mode device structures.

Original languageEnglish
Title of host publicationECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
Pages101-106
Number of pages6
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Event13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 11

Publication series

NameECS Transactions
Number4
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • Engineering(all)

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