Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices

Weitao Cheng; Akinobu Teramoto; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1143/JJAP.45.3110

Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices

Weitao Cheng, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface.

Original language	English
Pages (from-to)	3110-3116
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3110
Publication status	Published - 2006 Apr 25

Keywords

81(110)
Accumulation mode
Fully depleted
Mobility
Silicon on insulator
Transconductance

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.3110

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Cheng, W., Teramoto, A., Hirayama, M., Sugawa, S., & Ohmi, T. (2006). Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3110-3116. https://doi.org/10.1143/JJAP.45.3110

Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices. / Cheng, Weitao; Teramoto, Akinobu; Hirayama, Masaki ; Sugawa, Shigetoshi; Ohmi, Tadahiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3110-3116.

Research output: Contribution to journal › Article › peer-review

Cheng, W, Teramoto, A, Hirayama, M , Sugawa, S & Ohmi, T 2006, 'Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3110-3116. https://doi.org/10.1143/JJAP.45.3110

Cheng W, Teramoto A, Hirayama M , Sugawa S, Ohmi T. Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Apr 25;45(4 B):3110-3116. https://doi.org/10.1143/JJAP.45.3110

Cheng, Weitao ; Teramoto, Akinobu ; Hirayama, Masaki ; Sugawa, Shigetoshi ; Ohmi, Tadahiro. / Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3110-3116.

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abstract = "In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface.",

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