Abstract
In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface.
Original language | English |
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Pages (from-to) | 3110-3116 |
Number of pages | 7 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2006 Apr 25 |
Keywords
- 81(110)
- Accumulation mode
- Fully depleted
- Mobility
- Silicon on insulator
- Transconductance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)