Abstract
In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface.
| Original language | English |
|---|---|
| Pages (from-to) | 3110-3116 |
| Number of pages | 7 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2006 Apr 25 |
Keywords
- 81(110)
- Accumulation mode
- Fully depleted
- Mobility
- Silicon on insulator
- Transconductance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Cheng, W., Teramoto, A., Hirayama, M., Sugawa, S., & Ohmi, T. (2006). Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3110-3116. https://doi.org/10.1143/JJAP.45.3110