Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices

Weitao Cheng, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface.

Original languageEnglish
Pages (from-to)3110-3116
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Keywords

  • 81(110)
  • Accumulation mode
  • Fully depleted
  • Mobility
  • Silicon on insulator
  • Transconductance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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