TY - JOUR
T1 - Impact of hydrochloric acid on the epitaxial growth of In2O3films on (0001)α-Al2O3substrates by mist CVD
AU - Yamaguchi, Tomohiro
AU - Takahashi, Subaru
AU - Kiguchi, Takanori
AU - Sekiguchi, Atsushi
AU - Kaneko, Kentaro
AU - Fujita, Shizuo
AU - Nagai, Hiroki
AU - Sato, Mitsunobu
AU - Onuma, Takeyoshi
AU - Honda, Tohru
PY - 2020/7/1
Y1 - 2020/7/1
N2 - In2O3 films were epitaxially grown on (0001)α-Al2O3 substrates by mist CVD, and the impact of hydrochloric acid (HCl) was investigated by varying the HCl concentration in the source solution. Single-phase rhombohedral corundum-type In2O3 films, without the incorporation of body-centered cubic bixbite-type In2O3 phases, could be successfully grown directly on α-Al2O3 substrates by controlling only the HCl concentration. In growth by mist CVD, adding HCl to the source solution was found to affect not only the dissolution of the source precursor but also the growth kinetics of phase control, surface migration and impurity incorporation.
AB - In2O3 films were epitaxially grown on (0001)α-Al2O3 substrates by mist CVD, and the impact of hydrochloric acid (HCl) was investigated by varying the HCl concentration in the source solution. Single-phase rhombohedral corundum-type In2O3 films, without the incorporation of body-centered cubic bixbite-type In2O3 phases, could be successfully grown directly on α-Al2O3 substrates by controlling only the HCl concentration. In growth by mist CVD, adding HCl to the source solution was found to affect not only the dissolution of the source precursor but also the growth kinetics of phase control, surface migration and impurity incorporation.
UR - http://www.scopus.com/inward/record.url?scp=85091398744&partnerID=8YFLogxK
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U2 - 10.35848/1882-0786/ab9a90
DO - 10.35848/1882-0786/ab9a90
M3 - Article
AN - SCOPUS:85091398744
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 7
M1 - 075504
ER -