In order to reduce the ever increasing cost for ULSI manufacturing due to the complexity of integrated circuits, dramatic simplification in the logic LSI architecture as well as the very flexible circuit configuration have been achieved using a high-functionality device neuron-MOSFET (i/MOS). In i/MOS logic circuits, however, computations based on the multiplevalued logic is the key for enhancing the functionality. Therefore, much higher accuracy of processing is required. After brief description of the operational principle of i/MOS logic, the relationship between the number of multiple logic levels and the functionality enhancement is discussed for further enhancing the functionality of vMOS logic circuits by increasing the number of multiple logic levels, and the accuracy requirements for the manufacturing processes are studied. The order of a few percent accuracy is required for all principal device structural parameters when it is aimed to handle 50-Ievel multiple-valued variable in ; the yMOS logic circuit.
|Number of pages||8|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 1996|
- High-precision processing, neiiron-mos, highfunctionality circuit, ultra clean technology, multiple-valued logic
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering