Impact of high B concentrations and high dislocation densities on Au diffusion in Si

A. Rodriguez, H. Bracht, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The diffusion of Au in highly dislocated, virtually undoped and heavily B-doped Si at temperatures between 800 and 1100°C was discussed. The neutron-activation analysis in conjunction with serial sectioning was used for the investigation purpose. It was found that by increasing B doping, the diffusivity of Au increases. The profiles yield an enhanced boundary concentration and a decreased Au diffusion coefficient below 1000°C. The results show that the doping difference of Au diffusion is due to an increased solubility CAuieq with increasing B doping.

Original languageEnglish
Pages (from-to)7841-7849
Number of pages9
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
Publication statusPublished - 2004 Jun 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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