Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'uchi, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The impact of work function variation (WFV) in a metal gate (MG) electrode on low-frequency noise (LFN) is revealed for fin field-effect transistors (FinFETs). The LFN level is compared between the FinFETs having polycrystalline TiN and amorphous TaSiN MGs. The amorphous TaSiN MG exhibits a marked suppression of flicker noise in comparison with the TiN MG. The difference in the LFN level is correlated with the threshold voltage variability reflecting the WFV of the MG. By modeling the WFV of the TiN MG in the FinFET structure by three-dimensional device simulation, we clearly reveal the mechanism of the LFN increase by the WFV.

Original languageEnglish
Article number044201
JournalApplied Physics Express
Volume8
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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