The impact of work function variation (WFV) in a metal gate (MG) electrode on low-frequency noise (LFN) is revealed for fin field-effect transistors (FinFETs). The LFN level is compared between the FinFETs having polycrystalline TiN and amorphous TaSiN MGs. The amorphous TaSiN MG exhibits a marked suppression of flicker noise in comparison with the TiN MG. The difference in the LFN level is correlated with the threshold voltage variability reflecting the WFV of the MG. By modeling the WFV of the TiN MG in the FinFET structure by three-dimensional device simulation, we clearly reveal the mechanism of the LFN increase by the WFV.
ASJC Scopus subject areas
- Physics and Astronomy(all)