Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 - xGex/Si(100) heterostructure

Takahiro Seo, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si0.8Ge0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.

Original languageEnglish
Pages (from-to)110-112
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3
Externally publishedYes

Keywords

  • Heterostructure
  • Negative differential conductance (NDC)
  • Quantum well
  • Resonant tunneling diode (RTD)
  • Si
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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