Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

W. Mizubayashi; K. Fukuda; T. Mori; K. Endo; Y. X. Liu; T. Matsukawa; S. O'Uchi; Y. Ishikawa; S. Migita; Y. Morita; A. Tanabe; J. Tsukada; H. Yamauchi; M. Masahara; H. Ota

doi:10.1016/j.sse.2015.04.011

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'Uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the impact of fin length (T_fin) on the threshold voltage (V_th) modulation by back bias (V_b) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that V_th can be tuned by V_b for IDG tFinFETs regardless of T_fin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of V_th with respect to V_b increases with thinning T_fin. This means that T_fin thinning is effective for tuning V_th by V_b for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

Original language	English
Pages (from-to)	62-66
Number of pages	5
Journal	Solid-State Electronics
Volume	111
DOIs	https://doi.org/10.1016/j.sse.2015.04.011
Publication status	Published - 2015 Sep 1
Externally published	Yes

Keywords

Back bias
Threshold voltage
Tunnel field-effect transistor (FET)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2015.04.011

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Cite this

Mizubayashi, W., Fukuda, K., Mori, T., Endo, K., Liu, Y. X., Matsukawa, T., O'Uchi, S., Ishikawa, Y., Migita, S., Morita, Y., Tanabe, A., Tsukada, J., Yamauchi, H., Masahara, M., & Ota, H. (2015). Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. Solid-State Electronics, 111, 62-66. https://doi.org/10.1016/j.sse.2015.04.011

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. / Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y. X.; Matsukawa, T.; O'Uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H.

In: Solid-State Electronics, Vol. 111, 01.09.2015, p. 62-66.

Research output: Contribution to journal › Article › peer-review

Mizubayashi, W, Fukuda, K, Mori, T, Endo, K, Liu, YX, Matsukawa, T, O'Uchi, S, Ishikawa, Y, Migita, S, Morita, Y, Tanabe, A, Tsukada, J, Yamauchi, H, Masahara, M & Ota, H 2015, 'Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors', Solid-State Electronics, vol. 111, pp. 62-66. https://doi.org/10.1016/j.sse.2015.04.011

Mizubayashi, W. ; Fukuda, K. ; Mori, T. ; Endo, K. ; Liu, Y. X. ; Matsukawa, T. ; O'Uchi, S. ; Ishikawa, Y. ; Migita, S. ; Morita, Y. ; Tanabe, A. ; Tsukada, J. ; Yamauchi, H. ; Masahara, M. ; Ota, H. / Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. In: Solid-State Electronics. 2015 ; Vol. 111. pp. 62-66.

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abstract = "We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.",

keywords = "Back bias, Threshold voltage, Tunnel field-effect transistor (FET)",

author = "W. Mizubayashi and K. Fukuda and T. Mori and K. Endo and Liu, {Y. X.} and T. Matsukawa and S. O'Uchi and Y. Ishikawa and S. Migita and Y. Morita and A. Tanabe and J. Tsukada and H. Yamauchi and M. Masahara and H. Ota",

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AU - Mizubayashi, W.

AU - Fukuda, K.

AU - Mori, T.

AU - Endo, K.

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - O'Uchi, S.

AU - Ishikawa, Y.

AU - Migita, S.

AU - Morita, Y.

AU - Tanabe, A.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Masahara, M.

AU - Ota, H.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

AB - We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

KW - Back bias

KW - Threshold voltage

KW - Tunnel field-effect transistor (FET)

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