Impact of extension and source/drain resistance on FinFET performance

T. Matsukawa, K. Endo, Y. Ishikawa, H. Yamauchi, Y. X. Liu, S. O'Uchi, J. Tsukada, K. Ishii, K. Sakamoto, E. Suzuki, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.

Original languageEnglish
Title of host publication2008 IEEE International SOI Conference Proceedings
Pages159-160
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 24
Externally publishedYes
Event2008 IEEE International SOI Conference - New Paltz, NY, United States
Duration: 2008 Oct 62008 Oct 9

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2008 IEEE International SOI Conference
CountryUnited States
CityNew Paltz, NY
Period08/10/608/10/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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