Impact of extension and source/drain resistance on FinFET performance

T. Matsukawa; K. Endo; Y. Ishikawa; H. Yamauchi; Y. X. Liu; S. O'Uchi; J. Tsukada; K. Ishii; K. Sakamoto; E. Suzuki; M. Masahara

doi:10.1109/SOI.2008.4656343

Impact of extension and source/drain resistance on FinFET performance

T. Matsukawa, K. Endo, Y. Ishikawa, H. Yamauchi, Y. X. Liu, S. O'Uchi, J. Tsukada, K. Ishii, K. Sakamoto, E. Suzuki, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The parasitic resistance of the FinFET is investigated by the measurement based analysis. The R_S/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective R_p reduction. The R_ext seriously increases the Rp for T _fin<25 nm and also causes the R_p variability due to the T^fin variation.

Original language	English
Title of host publication	2008 IEEE International SOI Conference Proceedings
Pages	159-160
Number of pages	2
DOIs	https://doi.org/10.1109/SOI.2008.4656343
Publication status	Published - 2008 Dec 24
Externally published	Yes
Event	2008 IEEE International SOI Conference - New Paltz, NY, United States Duration: 2008 Oct 6 → 2008 Oct 9

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Other

Other	2008 IEEE International SOI Conference
Country/Territory	United States
City	New Paltz, NY
Period	08/10/6 → 08/10/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SOI.2008.4656343

Cite this

Matsukawa, T., Endo, K., Ishikawa, Y., Yamauchi, H., Liu, Y. X., O'Uchi, S., Tsukada, J., Ishii, K., Sakamoto, K., Suzuki, E., & Masahara, M. (2008). Impact of extension and source/drain resistance on FinFET performance. In 2008 IEEE International SOI Conference Proceedings (pp. 159-160). [4656343] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2008.4656343

Matsukawa, T, Endo, K, Ishikawa, Y, Yamauchi, H, Liu, YX, O'Uchi, S, Tsukada, J, Ishii, K, Sakamoto, K, Suzuki, E & Masahara, M 2008, Impact of extension and source/drain resistance on FinFET performance. in 2008 IEEE International SOI Conference Proceedings., 4656343, Proceedings - IEEE International SOI Conference, pp. 159-160, 2008 IEEE International SOI Conference, New Paltz, NY, United States, 08/10/6. https://doi.org/10.1109/SOI.2008.4656343

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abstract = "The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.",

author = "T. Matsukawa and K. Endo and Y. Ishikawa and H. Yamauchi and Liu, {Y. X.} and S. O'Uchi and J. Tsukada and K. Ishii and K. Sakamoto and E. Suzuki and M. Masahara",

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month = dec,

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doi = "10.1109/SOI.2008.4656343",

language = "English",

isbn = "9781424419548",

series = "Proceedings - IEEE International SOI Conference",

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AU - Matsukawa, T.

AU - Endo, K.

AU - Ishikawa, Y.

AU - Yamauchi, H.

AU - Liu, Y. X.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Ishii, K.

AU - Sakamoto, K.

AU - Suzuki, E.

AU - Masahara, M.

PY - 2008/12/24

Y1 - 2008/12/24

N2 - The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.

AB - The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.

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M3 - Conference contribution

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BT - 2008 IEEE International SOI Conference Proceedings

T2 - 2008 IEEE International SOI Conference

Y2 - 6 October 2008 through 9 October 2008

ER -

Impact of extension and source/drain resistance on FinFET performance

Abstract

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