TY - GEN
T1 - Impact of extension and source/drain resistance on FinFET performance
AU - Matsukawa, T.
AU - Endo, K.
AU - Ishikawa, Y.
AU - Yamauchi, H.
AU - Liu, Y. X.
AU - O'Uchi, S.
AU - Tsukada, J.
AU - Ishii, K.
AU - Sakamoto, K.
AU - Suzuki, E.
AU - Masahara, M.
PY - 2008/12/24
Y1 - 2008/12/24
N2 - The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.
AB - The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for T fin<25 nm and also causes the Rp variability due to the Tfin variation.
UR - http://www.scopus.com/inward/record.url?scp=57749208381&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57749208381&partnerID=8YFLogxK
U2 - 10.1109/SOI.2008.4656343
DO - 10.1109/SOI.2008.4656343
M3 - Conference contribution
AN - SCOPUS:57749208381
SN - 9781424419548
T3 - Proceedings - IEEE International SOI Conference
SP - 159
EP - 160
BT - 2008 IEEE International SOI Conference Proceedings
T2 - 2008 IEEE International SOI Conference
Y2 - 6 October 2008 through 9 October 2008
ER -