Impact of Electroless-Ni Seed Layer on Cu-Bottom-up Electroplating in High Aspect Ratio (>10) TSVs for 3D-IC Packaging Applications

Murugesan Mariappan, Mitsumasa Koyanagi, Takafumi Fukushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electroless (EL) Ni layer conformally formed inside the high aspect ratio (AR, >10) through-Si-via (TSV) has been investigated for its role as seed layer in bottom-up Cu electroplating. From the electro-chemical adsorption monitoring data it was found that the adsorption (or accumulation) of additives onto the EL-Ni surface for bottom-up Cu electroplating was prodoundly suppressed when compared with the Ni seed layer depositied by PVD. A simple and viable two step process was proposed and demonstrated to overcome the problem, and we were able to successfully fill the TSVs (width ~10 mm, AR > 10) with by Cu-electroplating using the EL- Ni as seed as well as barrier layer. Thus, this low-cost, readily-scalable (both in wafer-size and volume) and CMOS compatible EL method for the formation of Ni barrier-cum-seed layer in the high AR TSVs for integration and packaging applications has tremendous potential to replace the high-cost PVD or CVD barrier and seed layers..

Original languageEnglish
Title of host publicationProceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1736-1741
Number of pages6
ISBN (Electronic)9781728161808
DOIs
Publication statusPublished - 2020 Jun
Event70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States
Duration: 2020 Jun 32020 Jun 30

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2020-June
ISSN (Print)0569-5503

Conference

Conference70th IEEE Electronic Components and Technology Conference, ECTC 2020
CountryUnited States
CityOrlando
Period20/6/320/6/30

Keywords

  • Barrier-cum-Seed layer
  • EL-Ni
  • High-AR TSV

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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