TY - JOUR
T1 - Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs
AU - Gaubert, Philippe
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
PY - 2016/4/1
Y1 - 2016/4/1
N2 - The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of electrical performances but also in terms of noise level. These results, in addition to those regarding accumulation-mode p-MOSFETs, demonstrate that an improved CMOS technology built on simultaneously high-speed and low-noise accumulation-mode MOSFETs has been achieved, paving the way towards more reliable and faster microprocessors.
AB - The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of electrical performances but also in terms of noise level. These results, in addition to those regarding accumulation-mode p-MOSFETs, demonstrate that an improved CMOS technology built on simultaneously high-speed and low-noise accumulation-mode MOSFETs has been achieved, paving the way towards more reliable and faster microprocessors.
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U2 - 10.7567/JJAP.55.04ED08
DO - 10.7567/JJAP.55.04ED08
M3 - Article
AN - SCOPUS:84963650306
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04ED08
ER -