Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs

Philippe Gaubert; Akinobu Teramoto; Shigetoshi Sugawa

doi:10.7567/JJAP.55.04ED08

Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs

Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of electrical performances but also in terms of noise level. These results, in addition to those regarding accumulation-mode p-MOSFETs, demonstrate that an improved CMOS technology built on simultaneously high-speed and low-noise accumulation-mode MOSFETs has been achieved, paving the way towards more reliable and faster microprocessors.

Original language	English
Article number	04ED08
Journal	Japanese journal of applied physics
Volume	55
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.55.04ED08
Publication status	Published - 2016 Apr 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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