Abstract
The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of electrical performances but also in terms of noise level. These results, in addition to those regarding accumulation-mode p-MOSFETs, demonstrate that an improved CMOS technology built on simultaneously high-speed and low-noise accumulation-mode MOSFETs has been achieved, paving the way towards more reliable and faster microprocessors.
| Original language | English |
|---|---|
| Article number | 04ED08 |
| Journal | Japanese journal of applied physics |
| Volume | 55 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2016 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Gaubert, P., Teramoto, A., & Sugawa, S. (2016). Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs. Japanese journal of applied physics, 55(4), [04ED08]. https://doi.org/10.7567/JJAP.55.04ED08