Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion

Masamitsu Haemori, Takahiro Nagata, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

92 Citations (Scopus)

Abstract

In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10 3-104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.

Original languageEnglish
Article number061401
JournalApplied Physics Express
Volume2
Issue number6
DOIs
Publication statusPublished - 2009 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Impact of Cu electrode on switching behavior in a Cu/HfO<sub>2</sub>/Pt structure and resultant Cu ion diffusion'. Together they form a unique fingerprint.

Cite this