Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion

Masamitsu Haemori, Takahiro Nagata, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

92 Citations (Scopus)


In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10 3-104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.

Original languageEnglish
Article number061401
JournalApplied Physics Express
Issue number6
Publication statusPublished - 2009 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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