TY - JOUR
T1 - Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion
AU - Haemori, Masamitsu
AU - Nagata, Takahiro
AU - Chikyow, Toyohiro
PY - 2009/6/1
Y1 - 2009/6/1
N2 - In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10 3-104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.
AB - In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10 3-104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.
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U2 - 10.1143/APEX.2.061401
DO - 10.1143/APEX.2.061401
M3 - Article
AN - SCOPUS:67949121971
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 6
M1 - 061401
ER -