Impact of Cu diffusion from Cu through-silicon via (TSV) on device reliability in 3-D LSIs evaluated by transient capacitance measurement

Kangwook Lee, Jichel Bea, Yuki Ohara, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

The influence of Cu contamination from Cu through-silicon via (TSV) on device reliability in the 3-D LSI was electrically evaluated by capacitance-time (C-t) measurement. The Cu/Ta gate trench capacitors with two types of Ta barrier layers of 10-nm and 100-nm thicknesses (at the wafer surface) were fabricated. The C-t curves of the trench capacitors with 10-nm thick Ta layer were severely degraded even after the initial annealing for 5min. It means that Cu atoms diffuse into the active area from the Cu TSV through scallop portions with extremely thin Ta layer in TSVs, and consequently, the generation lifetime of minority carrier is significantly reduced. Meanwhile, the C-t curves of the trench capacitors with 100-nm thick Ta layer exhibit no change after annealing up to 60min at 300°C, but show significant degradation after the initial annealing for 5min at 400°C. The C-t analysis is a useful method to electrically characterize the influence of Cu contamination from the Cu TSV on device reliability in fabricated LSI wafers.

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
Pages2B.4.1-2B.4.6
DOIs
Publication statusPublished - 2012 Sep 28
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: 2012 Apr 152012 Apr 19

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period12/4/1512/4/19

Keywords

  • 3D LSI
  • Capacitance-time (C-t)
  • Charge carrier lifetime
  • Cu TSV
  • Cu diffusion

ASJC Scopus subject areas

  • Engineering(all)

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    Lee, K., Bea, J., Ohara, Y., Fukushima, T., Tanaka, T., & Koyanagi, M. (2012). Impact of Cu diffusion from Cu through-silicon via (TSV) on device reliability in 3-D LSIs evaluated by transient capacitance measurement. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. 2B.4.1-2B.4.6). [6241777] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241777