Impact of contact resistance on memory window in phase-change random access memory (PCRAM)

Jun seop An, Chul min Choi, Satoshi Shindo, Yuji Sutou, Yong woo Kwon, Yun heub Song

Research output: Contribution to journalArticlepeer-review


This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using Ge 2Se 2Te 5 (GST). We discuss the increase of contact resistance, as device is scaled down to a nanometer size and the effects of contact resistivity changes with respect to the resistance window between the set and reset states. In a contact area of 400nm2, the contact resistance in the set state occupies more than 80 % of the total resistance, and the occupied area increases as the contact area is scaled upward. The memory window is significantly degraded as the set resistance increases because of the increasing contact resistance. To maintain the memory window with more than two orders of magnitude of the resistance in a 100nm2 area, the contact resistance should be decreased to less than 60 % of that of a 400nm2 area by reducing contact resistivity or by some other method. We examine the reduction of contact resistance achieved by adopting a three-dimensional contact structure, and we propose this structure as a candidate for the scaled PCRAM.

Original languageEnglish
Pages (from-to)1570-1576
Number of pages7
JournalJournal of Computational Electronics
Issue number4
Publication statusPublished - 2016 Dec 1


  • Contact resistance
  • Contact resistivity
  • GST
  • Memory window
  • Reset operation current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modelling and Simulation
  • Electrical and Electronic Engineering


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