TY - JOUR
T1 - Impact of channel direction dependent low field hole mobility on (100) orientation silicon surface
AU - Kuroda, Rihito
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/4
Y1 - 2011/4
N2 - An obvious channel direction dependency of the low field hole mobility on (100) oriented silicon surface is experimentally obtained for p-channel metal-oxide-silicon field-effect-transistor (MOSFET) fabricated on atomically flattened silicon wafer. The low electric field hole mobility measured at a low temperature takes the maximal at [001] directions and the minimal at [011] directions, respectively. The obtained channel direction dependency agrees very well with that of the heavy hole effective mass. The correlations between the magnitude of channel direction dependency of the hole mobility and some physical parameters such as channel length, temperature, and lateral electric field are evaluated. As a result, a universal relationship was found between the mobility increase from [011] to [001] direction and the channel length over the average relaxation time constant of carrier scattering.
AB - An obvious channel direction dependency of the low field hole mobility on (100) oriented silicon surface is experimentally obtained for p-channel metal-oxide-silicon field-effect-transistor (MOSFET) fabricated on atomically flattened silicon wafer. The low electric field hole mobility measured at a low temperature takes the maximal at [001] directions and the minimal at [011] directions, respectively. The obtained channel direction dependency agrees very well with that of the heavy hole effective mass. The correlations between the magnitude of channel direction dependency of the hole mobility and some physical parameters such as channel length, temperature, and lateral electric field are evaluated. As a result, a universal relationship was found between the mobility increase from [011] to [001] direction and the channel length over the average relaxation time constant of carrier scattering.
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U2 - 10.1143/JJAP.50.04DC03
DO - 10.1143/JJAP.50.04DC03
M3 - Article
AN - SCOPUS:79955385547
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DC03
ER -