Impact of carbon coimplantation on boron behavior in silicon: Carbon-boron coclustering and suppression of boron diffusion

Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, T. Mogami

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Coimplantation of heterogeneous dopants in materials can be used to control the principal dopant distribution. We used atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) to investigate the impact of coimplanted carbon on boron diffusion in silicon. After annealing, three-dimensional APT analysis of dopant distributions revealed the presence of carbon-boron coclusters around the projection range of boron. In addition, SIMS depth profiles revealed enhanced boron concentration around the projection range of carbon. These results suggest that the carbon-boron interaction suppresses boron diffusion in silicon.

Original languageEnglish
Article number232101
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011 Jun 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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