Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Takayuki Kiba, Toru Tanaka, Yosuke Tamura, Akio Higo, Cedric Thomas, Seiji Samukawa, Akihiro Murayama

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

Original languageEnglish
Article number107112
JournalAIP Advances
Volume4
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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