Abstract
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.
Original language | English |
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Article number | 107112 |
Journal | AIP Advances |
Volume | 4 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 Oct 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)