Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Takayuki Kiba; Toru Tanaka; Yosuke Tamura; Akio Higo; Cedric Thomas; Seiji Samukawa; Akihiro Murayama

doi:10.1063/1.4897958

Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Takayuki Kiba, Toru Tanaka, Yosuke Tamura, Akio Higo, Cedric Thomas, Seiji Samukawa, Akihiro Murayama

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

Original language	English
Article number	107112
Journal	AIP Advances
Volume	4
Issue number	10
DOIs	https://doi.org/10.1063/1.4897958
Publication status	Published - 2014 Oct 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.",

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AU - Kiba, Takayuki

AU - Tanaka, Toru

AU - Tamura, Yosuke

AU - Higo, Akio

AU - Thomas, Cedric

AU - Samukawa, Seiji

AU - Murayama, Akihiro

PY - 2014/10/1

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N2 - We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

AB - We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

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Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Abstract

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