Impact of alkali-earth-elements incorporation on Vfb roll-off characteristics of La2O3 gated MOS device

T. Koyanagi; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3481593

Impact of alkali-earth-elements incorporation on V_fb roll-off characteristics of La₂O₃ gated MOS device

T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The impacts of Mg, MgO, CaO, SrO or BaO incorporation on La ₂O₃ MOS devices have been examined. Roll-off behavior in the flat-band voltage (V_fb) of the MOS capacitors on equivalent oxide thickness (EOT) has been observed. The roll-off characteristic has been suppressed with Mg incorporation. On the other hand, with MgO, CaO, SrO or BaO incorporation, the characteristic has been enhanced. Interface-state density (D_it) has slightly increased and leakage-current density (J _g) has unchanged with the incorporation.

Original language	English
Title of host publication	Physics and Technology of High-k Materials 8
Publisher	Electrochemical Society Inc.
Pages	67-74
Number of pages	8
Edition	3
ISBN (Electronic)	9781607681724
ISBN (Print)	9781566778220
DOIs	https://doi.org/10.1149/1.3481593
Publication status	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	3
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3481593

Cite this

Koyanagi, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Impact of alkali-earth-elements incorporation on V_fb roll-off characteristics of La₂O₃ gated MOS device. In Physics and Technology of High-k Materials 8 (3 ed., pp. 67-74). (ECS Transactions; Vol. 33, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3481593

Impact of alkali-earth-elements incorporation on V_fb roll-off characteristics of La₂O₃ gated MOS device. / Koyanagi, T.; Kakushima, K.; Ahmet, P. et al.

Physics and Technology of High-k Materials 8. 3. ed. Electrochemical Society Inc., 2010. p. 67-74 (ECS Transactions; Vol. 33, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koyanagi, T, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2010, Impact of alkali-earth-elements incorporation on V_fb roll-off characteristics of La₂O₃ gated MOS device. in Physics and Technology of High-k Materials 8. 3 edn, ECS Transactions, no. 3, vol. 33, Electrochemical Society Inc., pp. 67-74. https://doi.org/10.1149/1.3481593

@inproceedings{6cc26b136e48411e9b885f5e5321e751,

title = "Impact of alkali-earth-elements incorporation on Vfb roll-off characteristics of La2O3 gated MOS device",

abstract = "The impacts of Mg, MgO, CaO, SrO or BaO incorporation on La 2O3 MOS devices have been examined. Roll-off behavior in the flat-band voltage (Vfb) of the MOS capacitors on equivalent oxide thickness (EOT) has been observed. The roll-off characteristic has been suppressed with Mg incorporation. On the other hand, with MgO, CaO, SrO or BaO incorporation, the characteristic has been enhanced. Interface-state density (Dit) has slightly increased and leakage-current density (J g) has unchanged with the incorporation.",

author = "T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

year = "2010",

doi = "10.1149/1.3481593",

language = "English",

isbn = "9781566778220",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "67--74",

booktitle = "Physics and Technology of High-k Materials 8",

edition = "3",

}

TY - GEN

T1 - Impact of alkali-earth-elements incorporation on Vfb roll-off characteristics of La2O3 gated MOS device

AU - Koyanagi, T.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2010

Y1 - 2010

N2 - The impacts of Mg, MgO, CaO, SrO or BaO incorporation on La 2O3 MOS devices have been examined. Roll-off behavior in the flat-band voltage (Vfb) of the MOS capacitors on equivalent oxide thickness (EOT) has been observed. The roll-off characteristic has been suppressed with Mg incorporation. On the other hand, with MgO, CaO, SrO or BaO incorporation, the characteristic has been enhanced. Interface-state density (Dit) has slightly increased and leakage-current density (J g) has unchanged with the incorporation.

AB - The impacts of Mg, MgO, CaO, SrO or BaO incorporation on La 2O3 MOS devices have been examined. Roll-off behavior in the flat-band voltage (Vfb) of the MOS capacitors on equivalent oxide thickness (EOT) has been observed. The roll-off characteristic has been suppressed with Mg incorporation. On the other hand, with MgO, CaO, SrO or BaO incorporation, the characteristic has been enhanced. Interface-state density (Dit) has slightly increased and leakage-current density (J g) has unchanged with the incorporation.

UR - http://www.scopus.com/inward/record.url?scp=79952657445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952657445&partnerID=8YFLogxK

U2 - 10.1149/1.3481593

DO - 10.1149/1.3481593

M3 - Conference contribution

AN - SCOPUS:79952657445

SN - 9781566778220

T3 - ECS Transactions

SP - 67

EP - 74

BT - Physics and Technology of High-k Materials 8

PB - Electrochemical Society Inc.

ER -