Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device

T. Koyanagi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.

    Original languageEnglish
    Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
    Pages17-22
    Number of pages6
    Edition6
    DOIs
    Publication statusPublished - 2009 Dec 1
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
    Duration: 2009 Oct 52009 Oct 7

    Publication series

    NameECS Transactions
    Number6
    Volume25
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    CountryAustria
    CityVienna
    Period09/10/509/10/7

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Koyanagi, T., Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2009). Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 17-22). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206603