Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device

T. Koyanagi; K. Okamoto; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3206603

Impact of alkali earth elements incorporation on electrical characteristics of La₂O₃ gated MOS device

T. Koyanagi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La ₂O₃ MOS devices have been examined. A roll-off characteristic in flat-band voltage (V_fb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (J_g) has been observed.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Publisher	Electrochemical Society Inc.
Pages	17-22
Number of pages	6
Edition	6
ISBN (Electronic)	9781607680932
ISBN (Print)	9781566777438
DOIs	https://doi.org/10.1149/1.3206603
Publication status	Published - 2009
Externally published	Yes
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3206603

Cite this

Koyanagi, T., Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2009). Impact of alkali earth elements incorporation on electrical characteristics of La₂O₃ gated MOS device. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 17-22). (ECS Transactions; Vol. 25, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3206603

Impact of alkali earth elements incorporation on electrical characteristics of La₂O₃ gated MOS device. / Koyanagi, T.; Okamoto, K.; Kakushima, K. et al.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society Inc., 2009. p. 17-22 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koyanagi, T, Okamoto, K, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2009, Impact of alkali earth elements incorporation on electrical characteristics of La₂O₃ gated MOS device. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, Electrochemical Society Inc., pp. 17-22, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206603

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abstract = "The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.",

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