@inproceedings{87da41605d0848309607c73ea323ac07,
title = "Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device",
abstract = "The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.",
author = "T. Koyanagi and K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
year = "2009",
doi = "10.1149/1.3206603",
language = "English",
isbn = "9781566777438",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "17--22",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",
edition = "6",
note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",
}