Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage

Ziyuan Liu; Shuu Ito; Tomoya Saito; Soon W. Chang; Arito Ogawa; Sadayoshi Horii; Tsuyoshi Horikawa; Markus Wilde; Katsuyuki Fukutani; Toyohiro Chikyow

doi:10.1109/IRPS.2011.5784497

Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage

Ziyuan Liu, Shuu Ito, Tomoya Saito, Soon W. Chang, Arito Ogawa, Sadayoshi Horii, Tsuyoshi Horikawa, Markus Wilde, Katsuyuki Fukutani, Toyohiro Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The air-sensitivity of the poly-Si interface in MOS transistors and its impact on the electrical properties are studied. It is found that the gate leakage localized near the side of air-exposed edges is possibly caused by air-induced degradation of the poly-Si interface, which supplies mobile NH ₃-like species to the gate edge side surface, resulting in the formation of a non-stoichiometric as well as impurity-retaining, hence conductive, SiO_xN_y edge layer. Control of the air-sensitive interfacial oxynitride and its NH₃-related decomposition reaction is considered to be essential for improving the gate-edge leakage.

Original language	English
Title of host publication	2011 International Reliability Physics Symposium, IRPS 2011
Pages	3F.2.1-3F.2.7
DOIs	https://doi.org/10.1109/IRPS.2011.5784497
Publication status	Published - 2011
Externally published	Yes
Event	49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States Duration: 2011 Apr 10 → 2011 Apr 14

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	49th International Reliability Physics Symposium, IRPS 2011
Country	United States
City	Monterey, CA
Period	11/4/10 → 11/4/14

Keywords

Gate-edge leakage
hydrogen
poly Si interface

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/IRPS.2011.5784497

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Cite this

Liu, Z., Ito, S., Saito, T., Chang, S. W., Ogawa, A., Horii, S., Horikawa, T., Wilde, M., Fukutani, K., & Chikyow, T. (2011). Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage. In 2011 International Reliability Physics Symposium, IRPS 2011 (pp. 3F.2.1-3F.2.7). [5784497] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2011.5784497

Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage. / Liu, Ziyuan; Ito, Shuu; Saito, Tomoya; Chang, Soon W.; Ogawa, Arito; Horii, Sadayoshi; Horikawa, Tsuyoshi; Wilde, Markus; Fukutani, Katsuyuki; Chikyow, Toyohiro.

2011 International Reliability Physics Symposium, IRPS 2011. 2011. p. 3F.2.1-3F.2.7 5784497 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, Z, Ito, S, Saito, T, Chang, SW, Ogawa, A, Horii, S, Horikawa, T, Wilde, M, Fukutani, K & Chikyow, T 2011, Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage. in 2011 International Reliability Physics Symposium, IRPS 2011., 5784497, IEEE International Reliability Physics Symposium Proceedings, pp. 3F.2.1-3F.2.7, 49th International Reliability Physics Symposium, IRPS 2011, Monterey, CA, United States, 11/4/10. https://doi.org/10.1109/IRPS.2011.5784497

Liu, Ziyuan ; Ito, Shuu ; Saito, Tomoya ; Chang, Soon W. ; Ogawa, Arito ; Horii, Sadayoshi ; Horikawa, Tsuyoshi ; Wilde, Markus ; Fukutani, Katsuyuki ; Chikyow, Toyohiro. / Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage. 2011 International Reliability Physics Symposium, IRPS 2011. 2011. pp. 3F.2.1-3F.2.7 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "The air-sensitivity of the poly-Si interface in MOS transistors and its impact on the electrical properties are studied. It is found that the gate leakage localized near the side of air-exposed edges is possibly caused by air-induced degradation of the poly-Si interface, which supplies mobile NH 3-like species to the gate edge side surface, resulting in the formation of a non-stoichiometric as well as impurity-retaining, hence conductive, SiOxNy edge layer. Control of the air-sensitive interfacial oxynitride and its NH3-related decomposition reaction is considered to be essential for improving the gate-edge leakage.",

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