Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage

Ziyuan Liu, Shuu Ito, Tomoya Saito, Soon W. Chang, Arito Ogawa, Sadayoshi Horii, Tsuyoshi Horikawa, Markus Wilde, Katsuyuki Fukutani, Toyohiro Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The air-sensitivity of the poly-Si interface in MOS transistors and its impact on the electrical properties are studied. It is found that the gate leakage localized near the side of air-exposed edges is possibly caused by air-induced degradation of the poly-Si interface, which supplies mobile NH 3-like species to the gate edge side surface, resulting in the formation of a non-stoichiometric as well as impurity-retaining, hence conductive, SiOxNy edge layer. Control of the air-sensitive interfacial oxynitride and its NH3-related decomposition reaction is considered to be essential for improving the gate-edge leakage.

Original languageEnglish
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
Pages3F.2.1-3F.2.7
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: 2011 Apr 102011 Apr 14

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period11/4/1011/4/14

Keywords

  • Gate-edge leakage
  • hydrogen
  • poly Si interface

ASJC Scopus subject areas

  • Engineering(all)

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