@inproceedings{2f9838332d4645d6b7d68a303db85d4d,
title = "Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage",
abstract = "The air-sensitivity of the poly-Si interface in MOS transistors and its impact on the electrical properties are studied. It is found that the gate leakage localized near the side of air-exposed edges is possibly caused by air-induced degradation of the poly-Si interface, which supplies mobile NH 3-like species to the gate edge side surface, resulting in the formation of a non-stoichiometric as well as impurity-retaining, hence conductive, SiOxNy edge layer. Control of the air-sensitive interfacial oxynitride and its NH3-related decomposition reaction is considered to be essential for improving the gate-edge leakage.",
keywords = "Gate-edge leakage, hydrogen, poly Si interface",
author = "Ziyuan Liu and Shuu Ito and Tomoya Saito and Chang, {Soon W.} and Arito Ogawa and Sadayoshi Horii and Tsuyoshi Horikawa and Markus Wilde and Katsuyuki Fukutani and Toyohiro Chikyow",
year = "2011",
doi = "10.1109/IRPS.2011.5784497",
language = "English",
isbn = "9781424491117",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "3F.2.1--3F.2.7",
booktitle = "2011 International Reliability Physics Symposium, IRPS 2011",
note = "49th International Reliability Physics Symposium, IRPS 2011 ; Conference date: 10-04-2011 Through 14-04-2011",
}