Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates

K. Ohmori, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, Toyohiro Chikyo, K. Shiraishi, Y. Nara, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

73 Citations (Scopus)

Abstract

We have clarified that, in a metal/high-k gate stack, as well as the variability introduced by random dopant fluctuations (RDF), the threshold voltage variability (TVV) is attributable to the crystal structure and grain size in the metal gate. We have successfully eliminated this additional factor by reducing the grain size in the metal gate. We demonstrated that the incorporation of C into TiN metal gates transforms the crystalline film into an amorphous one, effecting a reduction in the TVV in HfSiON pFET devices. We observed that the TVV of C-incorporated TiN devices was dominated by RDF, indicating that the additional factor due to the metal gate had been diminished.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ohmori, K., Matsuki, T., Ishikawa, D., Morooka, T., Aminaka, T., Sugita, Y., Chikyo, T., Shiraishi, K., Nara, Y., & Yamada, K. (2008). Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796707] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796707