Impact Ionization Phenomenon in 0.1μm MOSFET at Low Temperature and Low Voltage

M. Koyanagi, T. Matsumoto, M. Tsuno, T. Shimatani, Y. Yoshida, H. Watanabe

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


The impact ionization phenomenon in 0.1μm MOSFET's at low temperature and low drain voltage is investigated by measuring the substrate current and the kink current. It is observed that the substrate current and hence the impact ionization probability decrease as the temperature is decreased. The decrease of the substrate current with decreasing the temperature is more pronounced in such small size device which is operated at the lower drain voltage. The kink effect appears even in the bulk devices at low temperature. The kink effect becomes more serious as the temperature is lowered although the substrate current decreases with decreasing the temperature. The mechanism for such behaviors of the substrate current and the kink current at low temperature is discussed from the viewpoints of hot carrier energy, impact ionization threshold energy and forward-biasing effect of source junction in the low temperature.

Original languageEnglish
Pages (from-to)341-344
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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