Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs

N. Shigekawa; T. Furuta; Tetsuya Suemitsu; Y. Umeda

doi:10.1016/S0921-4526(99)00339-7

Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs

N. Shigekawa, T. Furuta, Tetsuya Suemitsu, Y. Umeda

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.

Original language	English
Pages (from-to)	562-564
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00339-7
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 1999 Jul 19 → 1999 Jul 23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs",

abstract = "Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.",

author = "N. Shigekawa and T. Furuta and Tetsuya Suemitsu and Y. Umeda",

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journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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number = "1-4",

note = "Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

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T1 - Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs

AU - Shigekawa, N.

AU - Furuta, T.

AU - Suemitsu, Tetsuya

AU - Umeda, Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.

AB - Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.

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EP - 564

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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