Imaging of friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces

K. Kanisawa, M. J. Butcher, H. Yamaguchi, Y. Hirayama

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Low-temperature scanning tunneling microscopy described the local density of states (LDOS) at the molecular beam epitaxial grown InAs surface on a GaAs(111)A substrate. Standing wave phenomena were continuously observed when the dI/dV mapping was done simultaneously with topography in the conduction band and the LDOS waves were imaged at point defects and within nanostructures. A nonparabolic dispersion relation for the conduction band was observed when the wavelength was measured as a function of bias voltage. The wave features came from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.

Original languageEnglish
Pages (from-to)3384-3387
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number15
DOIs
Publication statusPublished - 2001 Apr 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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