The local density of states at cleaved cross-sectional surfaces of InAs/GaSb superlattices were investigated by low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) with atomic resolution. Broken-gap energy band profiles (the overlap of the conduction band of InAs and the valence band of GaSb) were clearly seen in the LT-STS spectra as a function of growth direction. Clear images of electron standing waves confined in the superlattice were also obtained.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2006 May 8|
|Event||32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany|
Duration: 2005 Sep 18 → 2005 Sep 22
ASJC Scopus subject areas
- Condensed Matter Physics