Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy

Naoya Shibata, Scott D. Findlay, Hirokazu Sasaki, Takao Matsumoto, Hidetaka Sawada, Yuji Kohno, Shinya Otomo, Ryuichiro Minato, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    59 Citations (Scopus)

    Abstract

    Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions.

    Original languageEnglish
    Article number10040
    JournalScientific reports
    Volume5
    DOIs
    Publication statusPublished - 2015 Jun 12

    ASJC Scopus subject areas

    • General

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