Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy

T. Eguchi, Y. Fujikawa, K. Akiyama, T. An, M. Ono, T. Hashimoto, Y. Morikawa, K. Terakura, T. Sakurai, M. G. Lagally, Y. Hasegawa

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67 Citations (Scopus)

Abstract

The high resolution noncontact atomic force microscopy (AFM) was used for the true imaging of all dangling bonds and their potential on the Ge/Si(105) surface. Use of Kelvin-probe force microscopy (KFM) with AFM, revealed potential variations among the dangling bond states, directly monitoring a charge transfer between them. It was observed that high resolution non-contact AFM is more advantageous than scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. The combined high resolution noncontact AFM and Kelvin-probe method was found to be an ideal analytical tool for atomic structures and electronic properties of surfaces.

Original languageEnglish
Article number266102
JournalPhysical review letters
Volume93
Issue number26 I
DOIs
Publication statusPublished - 2004 Dec 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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