TY - JOUR
T1 - Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy
AU - Eguchi, T.
AU - Fujikawa, Y.
AU - Akiyama, K.
AU - An, T.
AU - Ono, M.
AU - Hashimoto, T.
AU - Morikawa, Y.
AU - Terakura, K.
AU - Sakurai, T.
AU - Lagally, M. G.
AU - Hasegawa, Y.
N1 - Funding Information:
Some of the authors (T. E., K. A., A. T., and Y. H.) acknowledge Adam Kollin and Zhouhang Wang on technical assistance. This work was partly supported by a Grant-in-Aid for Scientific Research (Nos. 13NP0201, 14750225) from the Ministry of Education, Science, Sports, and Culture of Japan and by NSF-MRSEC program.
PY - 2004/12/31
Y1 - 2004/12/31
N2 - The high resolution noncontact atomic force microscopy (AFM) was used for the true imaging of all dangling bonds and their potential on the Ge/Si(105) surface. Use of Kelvin-probe force microscopy (KFM) with AFM, revealed potential variations among the dangling bond states, directly monitoring a charge transfer between them. It was observed that high resolution non-contact AFM is more advantageous than scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. The combined high resolution noncontact AFM and Kelvin-probe method was found to be an ideal analytical tool for atomic structures and electronic properties of surfaces.
AB - The high resolution noncontact atomic force microscopy (AFM) was used for the true imaging of all dangling bonds and their potential on the Ge/Si(105) surface. Use of Kelvin-probe force microscopy (KFM) with AFM, revealed potential variations among the dangling bond states, directly monitoring a charge transfer between them. It was observed that high resolution non-contact AFM is more advantageous than scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. The combined high resolution noncontact AFM and Kelvin-probe method was found to be an ideal analytical tool for atomic structures and electronic properties of surfaces.
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U2 - 10.1103/PhysRevLett.93.266102
DO - 10.1103/PhysRevLett.93.266102
M3 - Article
AN - SCOPUS:42749098678
VL - 93
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 26 I
M1 - 266102
ER -