III-V-Based Ferromagnetic Semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

This chapter deals with III-V compound semiconductors such as GaAs and InAs alloyed with Mn, which exhibit ferromagnetism. It compiles the magnetic, electrical, and optical properties of ferromagnetic III-V semiconductors along with the way to prepare the epitaxial films and the effect of postgrowth annealing. Theories available to explain the magnetism in these alloys are then presented. Because the ferromagnetic semiconductors are compatible with epitaxial III-V heterostructures, a number of device structures have been examined and shown to reveal a wide variety of phenomena that either cannot be realized or are very difficult to observe in ferromagnetic metal structures. The unique properties revealed by ferromagnetic semiconductor structures, ranging from reversible electric field control of ferromagnetic phase transition to generating velocity versus current-density curves of current-induced domain wall motion, are then reviewed. The prospect of realizing high-transition temperature is discussed in the last section. © 2009

Original languageEnglish
Title of host publicationNanomagnetism and Spintronics
PublisherElsevier
Pages277-315
Number of pages39
ISBN (Print)9780444531148
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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