@article{f8e972c4be65498bafdfe74b1111550f,
title = "IIB-7 High Speed and Compact CMOS Circuits with Multipillar Surrounding Gate Transistors",
author = "Akihiro Nitayama and Fumio Horiguchi and Hiroshi Takato and Naoko Okabe and Kazumasa Sunouchi and Katsuhiko Hieda and Fujio Masuoka",
note = "Funding Information: This work was sponsored by the Joint Services Electronics Program. [I] G. G. Shahidi, D. A. Antoniadis, and H. I. Smith, IEEE Electron Device Lett., vol. EDL-9, p. 94. 1988; and J. Vac. Sci. Technol. E, vol. 6, p. 137, 1988. 121 G. 0. Shahidi, D. A. Antoniadis, and H. I. Smith, “Reduction of channel-hot-electron-generated substrate current in sub-150 nm chan-nel length Si MOSFETs.” IEEE Electron Device Lett., vol. 9, p. 497, 1988.",
year = "1989",
month = nov,
doi = "10.1109/16.43705",
language = "English",
volume = "36",
pages = "2605--2606",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}