The surface reaction kinetics of chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS; CH3SiCl3) and hydrogen were studied to identify gaseous species contributing to SiC film formation. First, SiC was deposited into relatively deep microtrenches with aspect ratios of up to 64:1, and the film-thickness profiles within the deep microtrenches were analyzed to evaluate the sticking probabilities (η) of the film-forming species. Two film-forming species were identified with η of 10–2 and 10–5 at 1,000°C. Next, their partial pressures at several positions in the reactor were estimated from their respective η and deposition rates. The low-η species was identified as MTS by comparing the partial pressure measured by quadrupole mass spectrometer with that calculated by elementary reaction simulations. Similarly, the high-η species was likely CH2SiCl3 generated via gas-phase decomposition of MTS. Such identification is crucial to optimize the deposition conditions and also design of a reactor.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials