Identification of film-forming species during SiC-CVD of CH3SiCl3/H2 by exploiting deep microtrenches

Kohei Shima, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Shimogaki Yukihiro

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The surface reaction kinetics of chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS; CH3SiCl3) and hydrogen were studied to identify gaseous species contributing to SiC film formation. First, SiC was deposited into relatively deep microtrenches with aspect ratios of up to 64:1, and the film-thickness profiles within the deep microtrenches were analyzed to evaluate the sticking probabilities (η) of the film-forming species. Two film-forming species were identified with η of 10–2 and 10–5 at 1,000°C. Next, their partial pressures at several positions in the reactor were estimated from their respective η and deposition rates. The low-η species was identified as MTS by comparing the partial pressure measured by quadrupole mass spectrometer with that calculated by elementary reaction simulations. Similarly, the high-η species was likely CH2SiCl3 generated via gas-phase decomposition of MTS. Such identification is crucial to optimize the deposition conditions and also design of a reactor.

Original languageEnglish
Pages (from-to)P423-P429
JournalECS Journal of Solid State Science and Technology
Issue number8
Publication statusPublished - 2019
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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