I-V measurement of NiO nanoregion during observation by transmission electron microscopy

Takashi Fujii; Masashi Arita; Kouichi Hamada; Hirofumi Kondo; Hiromichi Kaji; Yasuo Takahashi; Masahiro Moniwa; Ichiro Fujiwara; Takeshi Yamaguchi; Masaki Aoki; Yoshinori Maeno; Toshio Kobayashi; Masaki Yoshimaru

doi:10.1063/1.3553868

I-V measurement of NiO nanoregion during observation by transmission electron microscopy

Takashi Fujii, Masashi Arita, Kouichi Hamada, Hirofumi Kondo, Hiromichi Kaji, Yasuo Takahashi, Masahiro Moniwa, Ichiro Fujiwara, Takeshi Yamaguchi, Masaki Aoki, Yoshinori Maeno, Toshio Kobayashi, Masaki Yoshimaru

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the forming process required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the breakdown type forming in the so-called filament model of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.

Original language	English
Article number	053702
Journal	Journal of Applied Physics
Volume	109
Issue number	5
DOIs	https://doi.org/10.1063/1.3553868
Publication status	Published - 2011 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{46937fe37fa84737990122e73bc90f23,

title = "I-V measurement of NiO nanoregion during observation by transmission electron microscopy",

abstract = "Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the forming process required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the breakdown type forming in the so-called filament model of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.",

author = "Takashi Fujii and Masashi Arita and Kouichi Hamada and Hirofumi Kondo and Hiromichi Kaji and Yasuo Takahashi and Masahiro Moniwa and Ichiro Fujiwara and Takeshi Yamaguchi and Masaki Aoki and Yoshinori Maeno and Toshio Kobayashi and Masaki Yoshimaru",

note = "Funding Information: This research was partially supported by a grant made available by the Global COE Program, “Center for Next-Generation Information Technology Based on Knowledge Discovery and Knowledge Federation,” from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). Part of this work was financially aided by MEXT and the Japan Society for the Promotion of Science (JSPS) (Grant Nos. 20035001 and 21560681).",

year = "2011",

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doi = "10.1063/1.3553868",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

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T1 - I-V measurement of NiO nanoregion during observation by transmission electron microscopy

AU - Fujii, Takashi

AU - Arita, Masashi

AU - Hamada, Kouichi

AU - Kondo, Hirofumi

AU - Kaji, Hiromichi

AU - Takahashi, Yasuo

AU - Moniwa, Masahiro

AU - Fujiwara, Ichiro

AU - Yamaguchi, Takeshi

AU - Aoki, Masaki

AU - Maeno, Yoshinori

AU - Kobayashi, Toshio

AU - Yoshimaru, Masaki

N1 - Funding Information: This research was partially supported by a grant made available by the Global COE Program, “Center for Next-Generation Information Technology Based on Knowledge Discovery and Knowledge Federation,” from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). Part of this work was financially aided by MEXT and the Japan Society for the Promotion of Science (JSPS) (Grant Nos. 20035001 and 21560681).

PY - 2011/3/1

Y1 - 2011/3/1

N2 - Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the forming process required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the breakdown type forming in the so-called filament model of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.

AB - Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the forming process required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the breakdown type forming in the so-called filament model of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.

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I-V measurement of NiO nanoregion during observation by transmission electron microscopy

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