I-V measurement of NiO nanoregion during observation by transmission electron microscopy

Takashi Fujii, Masashi Arita, Kouichi Hamada, Hirofumi Kondo, Hiromichi Kaji, Yasuo Takahashi, Masahiro Moniwa, Ichiro Fujiwara, Takeshi Yamaguchi, Masaki Aoki, Yoshinori Maeno, Toshio Kobayashi, Masaki Yoshimaru

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20 Citations (Scopus)


Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the forming process required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the breakdown type forming in the so-called filament model of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.

Original languageEnglish
Article number053702
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 2011 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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