Hydrogenated amorphous silicon position sensitive detector

Satoshi Arimoto; Hidekazu Yamamoto; Hideo Ohno; Hideki Hasegawa

doi:10.1063/1.335343

Hydrogenated amorphous silicon position sensitive detector

Satoshi Arimoto, Hidekazu Yamamoto, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.

Original language	English
Pages (from-to)	4778-4782
Number of pages	5
Journal	Journal of Applied Physics
Volume	57
Issue number	10
DOIs	https://doi.org/10.1063/1.335343
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.335343

Cite this

@article{7ee49487f8c54d00a5efa0d8b836dd08,

title = "Hydrogenated amorphous silicon position sensitive detector",

abstract = "The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.",

author = "Satoshi Arimoto and Hidekazu Yamamoto and Hideo Ohno and Hideki Hasegawa",

year = "1985",

doi = "10.1063/1.335343",

language = "English",

volume = "57",

pages = "4778--4782",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Hydrogenated amorphous silicon position sensitive detector

AU - Arimoto, Satoshi

AU - Yamamoto, Hidekazu

AU - Ohno, Hideo

AU - Hasegawa, Hideki

PY - 1985

Y1 - 1985

N2 - The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.

AB - The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.

UR - http://www.scopus.com/inward/record.url?scp=36549103454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549103454&partnerID=8YFLogxK

U2 - 10.1063/1.335343

DO - 10.1063/1.335343

M3 - Article

AN - SCOPUS:36549103454

SN - 0021-8979

VL - 57

SP - 4778

EP - 4782

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Hydrogenated amorphous silicon position sensitive detector

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this