TY - JOUR
T1 - Hydrogen termination for the growth of carbon nanotubes on silicon
AU - Tuyen, Le Thi Trong
AU - Minh, Phan Ngoc
AU - Roduner, Emil
AU - Chi, Pham Thi Duong
AU - Ono, Takahito
AU - Miyashita, Hidetoshi
AU - Khoi, Phan Hong
AU - Esashi, Masayoshi
N1 - Funding Information:
This work was also partly supported by the Vietnam national fundamental research program in Nanotechnology.
Funding Information:
Experiments in this work were done in the Venture Business Laboratory (VBL), Tohoku University. This work was financially supported in part by the Grant-in Aid Scientific Research from the Japanese Ministry of Education, Science, Sports, and Culture. Le T.T. Tuyen wants to sincerely thank Prof. Masayoshi Esashi for his kind invitation and the NICHE for the fund provided, and M.Sc. Nguyen Tuan Hong for his effective help in the preparation of this Letter.
PY - 2005/11/11
Y1 - 2005/11/11
N2 - Vertically aligned carbon nanotubes (CNTs) are grown on Fe-covered nano-structured Si tip apexes and planar Si substrates. Under the similar condition of a hot wire filament chemical vapor deposition technique, the growth and adhesion behaviors of the CNTs strongly depend on the chemical treatment of the Si surfaces, which determines the predominant chemical terminations. The Si substrates are terminated by hydrogen, or covered by a native oxide layer, or treated with tetramethyl ammonium hydroxide. The former provides an extremely strong adhesion, presumably due to the formation of Si-C direct bonds created in the initial stage of the CNT growth process, whereas the latter adheres poorly, and the third not at all, as revealed by images of scanning and transmission electron microscopy. A related concept of the CNT growth is suggested.
AB - Vertically aligned carbon nanotubes (CNTs) are grown on Fe-covered nano-structured Si tip apexes and planar Si substrates. Under the similar condition of a hot wire filament chemical vapor deposition technique, the growth and adhesion behaviors of the CNTs strongly depend on the chemical treatment of the Si surfaces, which determines the predominant chemical terminations. The Si substrates are terminated by hydrogen, or covered by a native oxide layer, or treated with tetramethyl ammonium hydroxide. The former provides an extremely strong adhesion, presumably due to the formation of Si-C direct bonds created in the initial stage of the CNT growth process, whereas the latter adheres poorly, and the third not at all, as revealed by images of scanning and transmission electron microscopy. A related concept of the CNT growth is suggested.
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U2 - 10.1016/j.cplett.2005.09.014
DO - 10.1016/j.cplett.2005.09.014
M3 - Article
AN - SCOPUS:27644587170
SN - 0009-2614
VL - 415
SP - 333
EP - 336
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -