Hydrogen interaction with Pd/SiO2/Si rectifying junction

Ming Zhao, Shinji Nagata, Shunya Yamamoto, Masahito Yoshikawa, Tatsuo Shikama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Al 2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.

Original languageEnglish
Pages (from-to)223-228
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number3
Publication statusPublished - 2010 Dec 15


  • Hydrogen sensor
  • Pd thin film
  • Rectifying junction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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