Hydrogen interaction with Pd/SiO2/Si rectifying junction

Ming Zhao; Shinji Nagata; Shunya Yamamoto; Masahito Yoshikawa; Tatsuo Shikama

doi:10.1016/j.mseb.2010.07.032

Hydrogen interaction with Pd/SiO₂/Si rectifying junction

Ming Zhao, Shinji Nagata, Shunya Yamamoto, Masahito Yoshikawa, Tatsuo Shikama

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The interaction between hydrogen and Pd/SiO₂/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO₂/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO₂/Si and Pd/Al ₂O₃ indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO₂/Si. Further comparison results between the surface I-V characteristic of Pd/SiO₂/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.

Original language	English
Pages (from-to)	223-228
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	175
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2010.07.032
Publication status	Published - 2010 Dec 15

Keywords

Hydrogen sensor
Pd thin film
Rectifying junction

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2010.07.032

Cite this

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title = "Hydrogen interaction with Pd/SiO2/Si rectifying junction",

abstract = "The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Al 2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.",

keywords = "Hydrogen sensor, Pd thin film, Rectifying junction",

author = "Ming Zhao and Shinji Nagata and Shunya Yamamoto and Masahito Yoshikawa and Tatsuo Shikama",

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T1 - Hydrogen interaction with Pd/SiO2/Si rectifying junction

AU - Zhao, Ming

AU - Nagata, Shinji

AU - Yamamoto, Shunya

AU - Yoshikawa, Masahito

AU - Shikama, Tatsuo

PY - 2010/12/15

Y1 - 2010/12/15

N2 - The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Al 2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.

AB - The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Al 2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.

KW - Hydrogen sensor

KW - Pd thin film

KW - Rectifying junction

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