Hydrogen-induced instability of the Ge(105) surface

Yasunori Fujikawa, T. Nagao, Y. Yamada-Takamura, Toshio Sakurai, T. Hashimoto, Y. Morikawa, K. Terakura, M. G. Lagally

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The structure and stability of the hydrogen-terminated (105) surface of Ge deposited on Si(105) substrates are investigated by scanning tunneling microscopy (STM). Investigations combining STM, electron energy loss spectroscopy, and theory reveal that Si incorporation into the surface Ge layer of hydrogen-terminated Ge/Si(105) drastically destabilizes the surface. The STM images obtained on this surface are well explained by the recently established rebonded-step structure model.

    Original languageEnglish
    Article number086105
    JournalPhysical Review Letters
    Volume94
    Issue number8
    DOIs
    Publication statusPublished - 2005 Mar 4

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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