Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

T. Nagata; M. Haemori; Y. Sakuma; T. Chikyow; J. Anzai; T. Uehara

doi:10.1063/1.3086715

Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai, T. Uehara

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 °C and crystallized at 55 °C.

Original language	English
Article number	066106
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3086715
Publication status	Published - 2009 Apr 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 °C and crystallized at 55 °C.",

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AU - Nagata, T.

AU - Haemori, M.

AU - Sakuma, Y.

AU - Chikyow, T.

AU - Anzai, J.

AU - Uehara, T.

PY - 2009/4/9

Y1 - 2009/4/9

N2 - The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 °C and crystallized at 55 °C.

AB - The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 °C and crystallized at 55 °C.

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