Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai, T. Uehara

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7 Citations (Scopus)

Abstract

The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 °C and crystallized at 55 °C.

Original languageEnglish
Article number066106
JournalJournal of Applied Physics
Volume105
Issue number6
DOIs
Publication statusPublished - 2009 Apr 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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