Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si2H6-adsorbed Si(100) surfaces

Tetsuhiro Horie, Yuji Takakuwa, Tetsuji Yamaguchi, Nobuo Miyamoto

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7 Citations (Scopus)

Abstract

The hydrogen desorption kinetics were investigated from the viewpoint of hydrogen-unoccupied site distributed on Si2H6-adsorbed Si(100) surfaces during isothermal annealing. The surface electronic state due to Si dimer dangling bonds was observed in situ by ultraviolet photoelectron spectroscopy. The hydrogen desorption was found to be a first-order reaction with an small activation energy of 21.9 kcal/mol, in comparison to the value obtained by thermal desorption spectroscopy (TDS), 47-58 kcal/mol. To interpret this discrepancy, we proposed a desorption reaction model, in which H2 formation from a paired monohydride on a dimer, which proceeds dominantly during isothermal disorption, is disturbed by dimer Si-Si bond breaking due to rapid temperature elevating in TDS, and therefore an additional energy for hydrogen to hop between resultant isolated monohydrides and form dihydride, 34.5±4.6 kcal/mol, is necessary in TDS for H2 desorption.

Original languageEnglish
Pages (from-to)344-348
Number of pages5
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - 1994 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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