Hydrogen desorption process of Si(100)/PH3

D. S. Yoo; M. Suemitsu; N. Miyamoto

doi:10.1063/1.360742

Hydrogen desorption process of Si(100)/PH₃

D. S. Yoo, M. Suemitsu, N. Miyamoto

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16 Citations (Scopus)

Abstract

Adsorption of PH₃ onto Si(100) and hydrogen desorption therefrom at various adsorption temperatures T_a have been investigated by the temperature-programmed-desorption (TPD) method, which includes measurements on repeatedly adsorbed surfaces to obtain the surface phosphorus coverage. The TPD peak showed a shift toward higher temperatures for T_a above 400°C, which can be correlated to the onset of the hydrogen desorption and a resultant concentrated adsorption of the phosphorus atoms during exposure. A support for this correlation is given by further analysis of the TPD line shape, which clarified that surface phosphorus restricts hydrogen desorption both by suppressing hydrogen association and by increasing the desorption energy.

Original language	English
Pages (from-to)	4988-4993
Number of pages	6
Journal	Journal of Applied Physics
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.360742
Publication status	Published - 1995 Dec 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.360742

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N2 - Adsorption of PH3 onto Si(100) and hydrogen desorption therefrom at various adsorption temperatures Ta have been investigated by the temperature-programmed-desorption (TPD) method, which includes measurements on repeatedly adsorbed surfaces to obtain the surface phosphorus coverage. The TPD peak showed a shift toward higher temperatures for Ta above 400°C, which can be correlated to the onset of the hydrogen desorption and a resultant concentrated adsorption of the phosphorus atoms during exposure. A support for this correlation is given by further analysis of the TPD line shape, which clarified that surface phosphorus restricts hydrogen desorption both by suppressing hydrogen association and by increasing the desorption energy.

AB - Adsorption of PH3 onto Si(100) and hydrogen desorption therefrom at various adsorption temperatures Ta have been investigated by the temperature-programmed-desorption (TPD) method, which includes measurements on repeatedly adsorbed surfaces to obtain the surface phosphorus coverage. The TPD peak showed a shift toward higher temperatures for Ta above 400°C, which can be correlated to the onset of the hydrogen desorption and a resultant concentrated adsorption of the phosphorus atoms during exposure. A support for this correlation is given by further analysis of the TPD line shape, which clarified that surface phosphorus restricts hydrogen desorption both by suppressing hydrogen association and by increasing the desorption energy.

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Hydrogen desorption process of Si(100)/PH₃

Abstract

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