Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular beam epitaxy

K. J. Kim; M. Suemitsu; N. Miyamoto

doi:10.1063/1.110144

Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular beam epitaxy

K. J. Kim, M. Suemitsu, N. Miyamoto

Information Devices Division

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16 Citations (Scopus)

Abstract

Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θⁿ should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.

Original language	English
Pages (from-to)	3358-3360
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	24
DOIs	https://doi.org/10.1063/1.110144
Publication status	Published - 1993 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110144

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AB - Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θn should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.

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