Abstract
Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θn should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.
Original language | English |
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Pages (from-to) | 3358-3360 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 24 |
DOIs | |
Publication status | Published - 1993 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)