Hydrogen desorption from SiH4 adsorbed SiGe(001) surfaces

F. Hirose, Y. Kimura, M. Shinohara, M. Niwano

Research output: Contribution to journalArticle

Abstract

Desorption rates of surface hydrogen from hydrogenated SiGe (001) surfaces with various Ge concentrations have been investigated with thermal desorption spectroscopy. The activation energy of the hydrogen desorption slightly decreases with an addition of Ge in the SiGe film where the frequency factor of the desorption increases. This implies that the desorption center is the Si site. Fourier transform infrared spectroscopy clearly indicates that the hydrogen desorbs not from Ge but mainly from Si at the substrate temperatures in excess of 430 °C, while the surface hydrogen desorbs both from Si and Ge sites below 430 °C.

Original languageEnglish
Pages (from-to)152-155
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • FTIR
  • Germanium
  • Hydrogen
  • Silicon
  • TDS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Hirose, F., Kimura, Y., Shinohara, M., & Niwano, M. (2006). Hydrogen desorption from SiH4 adsorbed SiGe(001) surfaces. Thin Solid Films, 508(1-2), 152-155. https://doi.org/10.1016/j.tsf.2005.08.401