Heteroepitaxial growth of 3C-SiC has been conducted on Si(001) substrate using monomethylsilane as a single source gas. By evaluating the crystalliniy of the film as a function of the growth temperature T and pressure P, a process window for a good epitaxy has been obtained, which is expressed as P c1(T) < P < Pc2(T). Both of the two critical pressures increase with T, and are both successfully expressed with a single analytical function derived from the hydrogen adsorption/desorption balance on the surface.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2007 Jan 12|
- Hydrogen adsorption/desorption
- Phase diagram
- Silicom carbide
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)