Abstract
The authors have established that chemisorption of atomic hydrogen on Si(110)5 multiplied by 1 surface forms two distinct 1 multiplied by 1 phases depending on temperature during H exposure. The high temperature phase is found to be the monohydride phase, Si(110):H. The room temperature phase has additional orbital intensity in its electronic density of states, which the authors interpret as due to hydrogen atoms chemisorbed weakly at nontetrahedral sites in the selvedge. Numerical estimates of the amounts of H involved have been made. The change of LEED pattern during H exposure suggests that the 5 multiplied by 1 superstructure is due to relaxation of surface Si atoms rather than due to surface vacancies.
| Original language | English |
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| Title of host publication | J Vac Sci Technol |
| Pages | 807-809 |
| Number of pages | 3 |
| Volume | 13 |
| Edition | 4 |
| Publication status | Published - 1976 Jul |
| Event | 3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent - San Diego, CA, USA Duration: 1976 Feb 3 → 1976 Feb 5 |
Other
| Other | 3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent |
|---|---|
| City | San Diego, CA, USA |
| Period | 76/2/3 → 76/2/5 |
ASJC Scopus subject areas
- Engineering(all)