HYDROGEN CHEMISORPTION ON THE SILICON (110) 5 multiplied by 1 SURFACE.

Toshio Sakurai, Homer D. Hagstrum

    Research output: Chapter in Book/Report/Conference proceedingChapter

    44 Citations (Scopus)

    Abstract

    The authors have established that chemisorption of atomic hydrogen on Si(110)5 multiplied by 1 surface forms two distinct 1 multiplied by 1 phases depending on temperature during H exposure. The high temperature phase is found to be the monohydride phase, Si(110):H. The room temperature phase has additional orbital intensity in its electronic density of states, which the authors interpret as due to hydrogen atoms chemisorbed weakly at nontetrahedral sites in the selvedge. Numerical estimates of the amounts of H involved have been made. The change of LEED pattern during H exposure suggests that the 5 multiplied by 1 superstructure is due to relaxation of surface Si atoms rather than due to surface vacancies.

    Original languageEnglish
    Title of host publicationJ Vac Sci Technol
    Pages807-809
    Number of pages3
    Volume13
    Edition4
    Publication statusPublished - 1976 Jul
    Event3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent - San Diego, CA, USA
    Duration: 1976 Feb 31976 Feb 5

    Other

    Other3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent
    CitySan Diego, CA, USA
    Period76/2/376/2/5

    ASJC Scopus subject areas

    • Engineering(all)

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