Hydrogen chemisorption on the 100 (2 × 1) surfaces of Si and Ge

Joel A. Appelbaum, G. A. Baraff, D. R. Hamann, H. D. Hagstrum, T. Sakurai

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    Abstract

    This paper combines a theoretical study of the Si(100) surface having a monolayer of atomic hydrogen chemisorbed to it with an experimental study of the analogous Ge(100) and Ge(110) surfaces. In the theoretical work the underlying (100) silicon surface is taken to be reconstructed according to the Schlier-Farnsworth-Levine pairing model with the hydrogen located on the unfilled tetrahedral bonds of this structure. Self-consistent calculations of the electronic potential, charge density, spectrum, and occupied surface density of states are carried out. The force on the hydrogen atoms is then calculated using the Hellman-Feynman theorem. This force is found to be close to zero, confirming that the hydrogen atoms are indeed at the equilibrium position for the chosen silicon geometry. Features in the calculated photoemission spectrum for the Si(100) 2 × 1 : H surface are discussed in terms of related features in the photoemission spectrum of Si(111) : H, but are found not to agree with the previously measured photoemission spectrum of Si(100) 2 × 1 : H. Measured photoemission and ion-neutralization spectra for Ge(100) 2 × 1 : H agree in their major features with what is calculated for Si(100) 2 × 1 : H, however, suggesting that the Ge(100) 2 × 1 : H surface is reconstricted according to the pairing model. Similarly, measured spectra for clean Ge(100) 2 × 1 agree with calculations for the row dimerized Si(100) surface.

    Original languageEnglish
    Pages (from-to)654-673
    Number of pages20
    JournalSurface Science
    Volume70
    Issue number1
    DOIs
    Publication statusPublished - 1978 Jan 1

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces

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  • Cite this

    Appelbaum, J. A., Baraff, G. A., Hamann, D. R., Hagstrum, H. D., & Sakurai, T. (1978). Hydrogen chemisorption on the 100 (2 × 1) surfaces of Si and Ge. Surface Science, 70(1), 654-673. https://doi.org/10.1016/0039-6028(78)90437-5