Hydrogen chemisorption on Si surfaces analyzed by magnetic-sector, atom-probe, field-ion microscopy

Toshio Sakurai, E. W. Müller, R. J. Culbertson, A. J. Melmed

    Research output: Contribution to journalArticlepeer-review

    32 Citations (Scopus)

    Abstract

    An atom-probe field-ion microscope was successfully employed for the first time to study semiconductor Si surfaces. Using a magnetic-sector type we have observed pure silicon Si+, monohydride SiH+, and dihydride SiH2+, ions from the well-ordered H-covered (111) and (110) planes, and pure silicon Si+, monohydride SiH+, and silane SiH4+ ions from the disordered (311) areas. This observation is taken as the evidence for the formation of the silicon dihydride and trihydride surface phases suggested by recent ultraviolet photoemission studies.

    Original languageEnglish
    Pages (from-to)578-581
    Number of pages4
    JournalPhysical Review Letters
    Volume39
    Issue number9
    DOIs
    Publication statusPublished - 1977

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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